Dose is one of the critical parameters for exposing resists in EUV lithography. A lower dose favors higher throughput, but aggravates stochastics due to low photon density [1]. However, a higher dose is not without complicating effects. First, resists have been shown to be thinned at higher EUV doses, due to outgassing [2]. Second, while the defect density is reduced by going...
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Website title: Exposing EUV | Frederick Chen | Substack