Exposing EUV

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Website title: Exposing EUV | Frederick Chen | Substack

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How EUV Resist Blur and Dose-Induced Thinning Set the Stochastic Defectivity Floor5 days ago

In this article, we will dive further into linking electron noise in EUV resists [1] to stochastic defectivity. In particular, it will be shown how the “floor” or the lower limit of a defect’s probability naturally comes about, when electron noise is combined with resist thinning with increasing dose [2]. We first review the probability for a 3 nm long, 4 nm wide defect (nega...

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Revisiting Electron Noise in EUV Lithography: It's Pseudo-Poissonian After All!10 days ago

In previous articles [1,2], I had focused on quantifying electron noise as a function of dose, and assessing the consequences. This turned out to be more equivocal than I expected. The statistics for treating the number of electrons as the product of electrons per photon and the number of photons (as I had done in the earlier articles) is fundamentally different from treating...

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